Inclusion of chalcogens raises electron mobility

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Gate capacitances of high electron mobility transistors

The gate-drain capacitance and the sourcedrain capacitance of High Electron Mobility transistors have been measured on a computer-aided measurement system. The variation of these capacitances with transistor bias voltages is explained and compared with the trend predicted by a capacitance model used in literature. Differences in measured and calculated results arise from the assumptions used in...

Diameter-dependent electron mobility of InAs nanowires.

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are ...

Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions

The continuous scaling of MOSFET devices into the nanoscale regime requires refined models for electron transport. Coulomb interactions must be considered because of two reasons. First the Coulomb force is a long range force implying that both the short and the long range interactions must be included in a particle ensemble. Second the hot-carrier and short-channel effects will have a significa...

Electron transport in nitrogen-polar high electron mobility transistors